Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy
نویسندگان
چکیده
postannealed InAs layers deposited by molecular beam epitaxy R. González-Arrabal, Y. González, L. González, M. García-Hernández, F. Munnik, and M. S. Martín-González Instituto de Microelectrónica de Madrid CSIC C/Isaac Newton, 8. Tres Cantos, E-28760 Madrid, Spain Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid, Spain Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden–Rossendorf, P.O. Box 510119, D-01314 Dresden, Germany
منابع مشابه
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
We present a study on the effects of quantum dot coverage on the properties of InAs dots embedded in GaAs and in metamorphic In0.15Ga0.85As confining layers grown by molecular beam epitaxy on GaAs substrates. We show that redshifted emission wavelengths exceeding 1.3 μm at room temperature were obtained by the combined use of InGaAs confining layers and high quantum dot coverage. The use of hig...
متن کاملTemperature-dependent transport properties of InAs films grown on lattice-mismatched GaP
Hall effect and electrical resistivity measurements were carried out on undoped InAs thin films grown by molecular-beam epitaxy directly on ~001! GaP substrates. The large lattice mismatch between these two compounds results in a high density array of misfit dislocations at the heterointerface and threading dislocations in the InAs epilayer. The threading dislocation density varies with epilaye...
متن کاملRoom temperature photoluminescence from InxAl(1−x)N films deposited by plasma- assisted molecular beam epitaxy
Articles you may be interested in Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy Effects of different plasma species (atomic N, metastable N 2 * , a...
متن کاملGrowth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP
The authors report the results of a detailed study of the effect of growth conditions, for molecular beam epitaxy, on the structural and optical properties of self-assembled InAs quantum dots QDs on In0.524Al0.476As. InAs QDs both buried in, and on top of, In0.524Al0.476As were analyzed using photoluminescence PL and atomic force microscopy. InAs QD morphology and peak PL emission wavelength bo...
متن کاملMeasurement of InAsSb bandgap energy and InAs/InAsSb band edgepositions using spectroscopic ellipsometry and photoluminescencespectroscopy
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy" The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and strain-balanced InAs/InAs 1Àx Sb x (x $ 0.1–0.4) superlattices grown on (100)-oriented GaSb substrates by molecular beam epitaxy are examined using X-ray diffract...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2009